NDLI: Computational investigation of dual-frequency power transfer in capacitively coupled plasmas

Content Provider	IEEE Xplore Digital Library
Author	Yiting Zhang Kushner, M.J. Sang Ki Nam Sriraman, S.
Copyright Year	2013
Description	Author affiliation: Lam Res. Corp., Fremont, CA, USA (Sang Ki Nam; Sriraman, S.) \|\| Electr. Eng. & Comput. Sci. Dept., Univ. of Michigan, Ann Arbor, MI, USA (Yiting Zhang; Kushner, M.J.)
Abstract	Summary form only given. Dual frequency capacitively coupled plasmas provide the microelectronics fabrication industry flexible control, high selectivity and uniformity. The spatial variation of the phases, magnitude and wavelength of the high frequency (HF) rf bias will affect electron density, electron temperature, sheath thickness and ion transit time through the sheath. These variations ultimately affect the ion energy and angular distributions (IEADs) to the substrate which are of critical importance for anisotropic etching or deposition. To optimize the separate control of rates of ionization and IEADs, the HF should be significantly different than the low frequency (LF), which results in the LF being few MHz. For classical sinusoidal rf biases applied on the same electrode, the HF/LF harmonic currents can be distinguished by their Fourier transforms. Recently, nonsinusoidal bias waveforms are being applied in etching recipes to control etching speed and selectivity, which then complicates separating the HF from LF since both now have high harmonic contents. In this paper, we report on a computational investigation of the rf power absorption, power coupling control and IEADs in a CCP resembling those industrially employed with dual-frequency biases both applied to the wafer substrate. The Hybrid Plasma Equipment Module (HPEM) was employed to predict plasma properties and obtain the harmonic contributions of voltage waveforms applied to the same electrode. The operating conditions are 20-50 mTorr in pure Ar and $Ar/C_{4}F_{8}/O_{2}$ gas mixtures under with 2 MHz + 60 MHz rf biases. The ratio of the HF/LF power can be used to control plasma density, and provide extra control for the width and energy of the IEADs.
Starting Page	1
Ending Page	1
File Size	101436
Page Count	1
File Format	PDF
ISBN	9781467351713
ISSN	07309244
DOI	10.1109/PLASMA.2013.6633247
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Plasmas Etching Harmonic analysis Frequency control Substrates Educational institutions
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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