NDLI: Inductively coupled plasma etching of hafnium-indium-zinc oxide using chlorine based gas mixtures

Content Provider	IEEE Xplore Digital Library
Author	Yong-Hee Choi Ho-Kyun Jang Jong Mok Shin Junhong Na Jae-Sung Kim Gyu Tae Kim
Copyright Year	2013
Description	Author affiliation: Sch. of Electr. Eng., Korea Univ., Seoul, South Korea (Yong-Hee Choi; Ho-Kyun Jang; Jong Mok Shin; Junhong Na; Jae-Sung Kim; Gyu Tae Kim)
Abstract	Summary form only given. Amorphous Hafnium-Indium-Zinc Oxide(a-HIZO) semiconductor materials are used to replace amorphous Gallium-Indium-Zinc Oxide(a-GIZO) as channel layer of thin film transistors (TFTs) to improve the stability of the electrical characteristics. However, research activities of a-HIZO etching process for the fabrication of TFTs have not been reported. In this work, we present the etching characteristics of HIZO stacked with photoresist using $Cl_{2}/Ar$ chemistry. Etching behaviours of HIZO have been investigated as a function of source power, bias power and pressure. As the $Cl_{2}$ concentration increased from pure Ar, the etch rate of HIZO film was slightly different from the trend of GIZO film. Atomic Force Microscopy(AFM), Depth profile of the HIZO film by Auger Electronspectroscopy(AES) and X-ray Photoelectron Spectroscopy(XPS) of the etched surface was carried to investigate the etching mechanism as $Cl_{2}$ increased. Additionally we tried to compare the etching mechanism of HIZO film with GIZO film to confirm the difference of chemical bonds caused by the influence of hafnium doping, estimated that the low chemical reaction between hafnium and $Cl_{2}$ based plasma suppress the reactive ion etching.
Starting Page	1
Ending Page	1
File Size	107091
Page Count	1
File Format	PDF
ISBN	9781467351713
ISSN	07309244
DOI	10.1109/PLASMA.2013.6633239
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Films Thin film transistors Plasmas Chemicals Hafnium Electrical engineering
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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