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Inductively Coupled Plasma Etching of Indium Zinc Oxide Thin Films with HBr Õ Ar Discharges
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Do Young Chungz, Chee Won |
| Copyright Year | 2008 |
| Abstract | High density plasma etching of indium zinc oxide IZO thin films was performed in HBr/Ar gas mix. As HBr concentration increased, the etch rate was decreased and etch profile was improved. The high degree of etch anisotropy was achieved with decreasing dc-bias voltage and increasing gas pressure. The formation of protective layer, which had a strong effect on the etch profile, was confirmed by surface analyses. The X-ray photoelectron spectroscopy revealed the formation of InBr3 and ZnBr2 compounds. It could be concluded that the etching of IZO films in HBr/Ar plasma was governed by ion sputtering along with chemical assistance. © 2008 The Electrochemical Society. DOI: 10.1149/1.2969446 All rights reserved. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://dspace.inha.ac.kr/bitstream/10505/1569/1/inductively.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |