NDLI: Molding compounds for high breakdown voltage applications on power IC semiconductors

Content Provider	IEEE Xplore Digital Library
Author	Chen, A.S. Shafi, A. Busse, R.W. Orr, R. Lo, R.H.Y.
Copyright Year	1997
Description	Author affiliation: Nat. Semicond. Corp., Santa Clara, CA, USA (Chen, A.S.)
Abstract	Power integrated circuits (IC) semiconductor devices are sensitive to any sort of process variations, device and package materials effects, and environmental changes and stresses that will affect their ability to withstand the maximum applied voltage during operation. For example, contact between the epoxy molding compound and the die surface can radically alter the electrical performance, especially after environmental stressing. Some of this could be mechanical, caused by thermal mismatch. Other reasons could be chemical interactions between the molding compound and the charges within the device passivation, which would also be greatly influenced by type. Unfortunately, there is a lack of literature available on electronic package effects on high voltage device behavior. In this study, the effect of molding compound on the breakdown voltage stability of a high voltage metal oxide semiconductor-field effect transistor (MOSFET), utilizing the RESURF (Reduced SURFace electric field) technique, was examined. Breakdown stability was tested by High Temperature Reverse Bias (HTRB) testing. Both compound and post-mold cure processes were found to affect the breakdown voltage, however, it also became clear that the compounds were not acting alone and it would be necessary to evaluate the chip passivation as well, and its interaction with the molding compound.
Starting Page	91
Ending Page	94
File Size	366322
Page Count	4
File Format	PDF
ISBN	078033857X
ISSN	05695503
DOI	10.1109/ECTC.1997.606151
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor device packaging Voltage Electronic packaging thermal management Passivation Stability Testing Power integrated circuits Semiconductor devices Integrated circuit packaging Semiconductor materials
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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