NDLI: Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ Measurement

Content Provider	IEEE Xplore Digital Library
Author	Kunhyuk Kang Keejong Kim Islam, A.E. Alam, M.A. Roy, K.
Copyright Year	2007
Description	Author affiliation: Purdue Univ., West Lafayette (Kunhyuk Kang; Keejong Kim; Islam, A.E.; Alam, M.A.; Roy, K.)
Abstract	Negative bias temperature instability (NBTI) in MOSFETs is one of the major reliability challenges in nano-scale technology. This paper presents an efficient technique to characterize and estimate the lifetime circuit reliability under NBTI degradation. Unlike conventional approaches, where a representative $f_{MAX}$ (maximum operating frequency) measurement from timing critical circuitry is used, we propose to utilize the standby circuit leakage $I_{DDQ}$ as a metric to detect and characterize temporal NBTI degradation in digital circuits. Compared to the $f_{MAX}$ based approach, the proposed $I_{DDQ}$ based technique benefits from lower test cost and improved capability of estimating reliability of complex circuitries such as ALUs and SRAM arrays. We have derived an analytical expression for circuit $I_{DDQ}$ from the analytical PMOS $V_{t}$ degradation model $(DeltaV_{t}$ prop $t^{1/6}$ ). The proposed model is verified with measurement data obtained from a test chip fabricated in 130 nm technology. Furthermore, we examine the possible applications of our proposed $I_{DDQ}$ based NBTI characterization. We show that the temporal degradation in static noise margin (SNM) of SRAM array and $f_{MAX}$ of random logic circuits are highly correlated to the $I_{DDQ}$ measurement, and this relationship can be used to predict long term circuit reliability.
Starting Page	358
Ending Page	363
File Size	646526
Page Count	6
File Format	PDF
ISBN	9781595936271
ISSN	0738100X
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Association for Computing Machinery, Inc. (ACM)
Subject Keyword	Degradation Niobium compounds Titanium compounds Circuit testing Random access memory Negative bias temperature instability MOSFETs Life estimation Lifetime estimation Frequency IDDQ Reliability Reliability Characterization NBTI
Content Type	Text
Resource Type	Article

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