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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hanson, S. Mingoo Seok Sylvester, D. Blaauw, D. |
| Copyright Year | 2007 |
| Description | Author affiliation: Univ. of Michigan, Ann Arbor (Hanson, S.; Mingoo Seok; Sylvester, D.; Blaauw, D.) |
| Abstract | Subthreshold circuit design is a strong candidate for use in future low power applications. It is not clear, however, that device scaling to 45 nm and beyond will be beneficial in subthreshold circuits. We investigate the implications of device scaling on subthreshold circuits and find that the slow scaling of gate oxide thickness leads to a 60 % reduction in $I_{on}/I_{off}$ between the 90 nm and 32 nm device generations. We highlight the effects of this device degradation on noise margins, delay, and energy. We subsequently propose an alternative scaling strategy and demonstrate significant improvements in noise margins, delay, and energy in $sub-V_{th}$ circuits. |
| Starting Page | 700 |
| Ending Page | 705 |
| File Size | 602463 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781595936271 |
| ISSN | 0738100X |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-06-04 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Association for Computing Machinery, Inc. (ACM) |
| Subject Keyword | Nanoscale devices Degradation Lead compounds Integrated circuit noise Delay effects Circuit noise Low voltage Timing MOSFETs Circuit synthesis ultra-low power Design Subthreshold circuits device scaling |
| Content Type | Text |
| Resource Type | Article |
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