NDLI: Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performance

Content Provider	IEEE Xplore Digital Library
Author	Kunhyuk Kang Park, S.P. Roy, K. Alam, M.A.
Copyright Year	2007
Description	Author affiliation: Purdue Univ., Lafayette (Kunhyuk Kang; Park, S.P.; Roy, K.; Alam, M.A.)
Abstract	Negative bias temperature instability (NBTI) in MOSFETs is one of the major reliability concerns in sub-100 nm technologies. So far, studies of NBTI and its impact on circuit performance have assumed an average behavior of the degradation process. However, in very short channel devices, finite number of Si-H bonds in the channel can induce a statistical random variation of the degradation process. This results in significant random Vt variations in PMOS transistor. The NBTI induced variation depends on operating temperature and the effective stress period for the specific device. In this paper, we analyze the impact of stochastic temporal NBTI variations and propose a compact circuit level Vt model. Using the proposed model, we show how temporal Vt variations can affect the lifetime performance of different circuit topologies including 6T SRAM cell and random combinational logic circuits.
Starting Page	730
Ending Page	734
File Size	1215489
Page Count	5
File Format	PDF
ISBN	9781424413812
ISSN	10923152
DOI	10.1109/ICCAD.2007.4397352
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-11-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Life estimation Lifetime estimation Niobium compounds Titanium compounds Degradation Circuit optimization MOSFETs Negative bias temperature instability Temperature dependence Stress
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Computer Science Applications Software

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