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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kornika Moolpho Jitkasame Ngarmnil |
| Copyright Year | 2006 |
| Description | Author affiliation: Dept. of Mechatronic Eng., Mahanakorn Univ. of Technol., Bangkok (Kornika Moolpho; Jitkasame Ngarmnil) |
| Abstract | A new high speed low voltage class-AB CMOS buffer is proposed in this paper. Embedded with the proposed low voltage error amplifier comprising only CMOS inverters and floating-gate MOSFETs, the well known complementary class-AB CMOS buffer is successfully designed and operated with 1.5V power supply and the unity gain bandwidth of 29MHz. The output stage delivers maximum output sinusoidal voltage swing of plusmn0.6V into a resistive load of 100 Ohms. The buffer exhibits -55dB THD for 100 kHz and plusmn0.5V output voltage swing with less than 1% output voltage error on a 0.5mum CMOS process. Simulation results on rectangular wave responses show the system stability and confirm the maximum output capacitive load of 60pF with 1V signal swing and 9.4 V/muS slew rate |
| Starting Page | 1779 |
| Ending Page | 1782 |
| File Size | 3792839 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424403871 |
| DOI | 10.1109/APCCAS.2006.342163 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-12-04 |
| Publisher Place | Singapore |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Low voltage MOSFETs Circuits Inverters Bandwidth Power supplies Mechatronics CMOS technology CMOS process Stability |
| Content Type | Text |
| Resource Type | Article |
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