NDLI: Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

Content Provider	IEEE Xplore Digital Library
Author	Jin-Oh Song Seong-Rae Lee Hyun-Joon Shin
Copyright Year	1965
Abstract	We developed a new Ti-alloyed Al-oxide (TiAlO/sub x/) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance /spl times/ area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 M/spl Omega/ /spl mu/m/sup 2/ as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450/spl deg/C and a higher bias voltage (V/sub h/) and breakdown voltage (V/sub B/) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO/sub x/ barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.
Sponsorship	IEEE Magnetics Society
Starting Page	2944
Ending Page	2946
Page Count	3
File Size	427136
File Format	PDF
ISSN	00189464
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal resistance Electric resistance Thermal stability Magnetic tunneling Photonic band gap Tunneling magnetoresistance Magnetic field measurement Electric variables measurement Materials science and technology Insulation Ti-alloyed Al-oxide barrier Magnetic tunnel junction (MTJ) resistance thermal and electrical stability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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