NDLI: Enhancement of tunnel magnetoresistance with oxidized AlHf-alloy for a tunnel barrier

Content Provider	IEEE Xplore Digital Library
Author	Komagaki, K. Noma, K. Yamada, K. Kanai, H. Uehara, Y.
Copyright Year	1965
Abstract	We investigated the tunnel magnetoresistance (TMR) with oxidized AlHf-Alloy barrier layer. As a result, at the range of Hf content (C/sub Hf/) from 0 at.% to 70 at.% the enhancement of the tunnel magnetoresistance ratio with the AlHf-oxide barrier was observed, especially, the TMR ratio was greatly increased from 9.6% to 21.4% when the C/sub Hf/ increased from 0 at.% to 17 at.%. Furthermore, we found the enhanced TMR ratio with AlHf layer at thin barrier thickness less than 0.55 nm at which the TMR ratio with Al layer was not observed. And the breakdown voltage was improved with the AlHf-oxide barrier. These results are explained by the consideration that a uniformity of the oxidation in the AlHf layer composed with an amorphous or a nanocrystallized state was better than that in the Al layer composed with the large grain boundaries such as fcc-Al.
Sponsorship	IEEE Magnetics Society
Starting Page	2697
Ending Page	2699
Page Count	3
File Size	125156
File Format	PDF
ISSN	00189464
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling magnetoresistance Hafnium Magnetic heads Oxidation Enhanced magnetoresistance Magnetic films Hard disks Zirconium Atmosphere Amorphous materials tunnel magnetoresistance (TMR) AlHf oxide amorphous resistance-area product (RA) tunnel barrier
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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