NDLI: Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

Content Provider	IEEE Xplore Digital Library
Author	Rhee, J.R. Hwang, J.Y. Kim, S.S. Kim, M.Y. Chun, B.S. Yoo, I.S. Oh, B.S. Kim, Y.K. Kim, T.W. Park, W.J.
Copyright Year	1965
Abstract	Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization (M/sub s/:560 emu/cm/sup 3/) and a higher anisotropy constant (K/sub u/:2 800 erg/cm/sup 3/) than CoFe and NiFe, respectively. An exchange coupling energy (J/sub ex/) of -0.003 erg/cm/sup 2/ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si-SiO/sub 2/-Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO/sub x//CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nanometers) MTJs structure, it was found that the size dependence of the switching field originated in the lower J/sub ex/ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity (H/sub c/) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.
Sponsorship	IEEE Magnetics Society
Starting Page	2685
Ending Page	2687
Page Count	3
File Size	115822
File Format	PDF
ISSN	00189464
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic switching Tunneling magnetoresistance Magnetic tunneling Antiferromagnetic materials Amorphous materials Amorphous magnetic materials Saturation magnetization Magnetic anisotropy Soft magnetic materials Perpendicular magnetic anisotropy tunneling magnetoresistance (TMR) Amorphous ferromagnet CoFeSiB magnetic random access memory (MRAM) switching field synthetic antiferromagnet (SAF)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Magneto-Transport Characteristics of Magnetic Tunnel Junction With a Synthetic Antiferromagnetic Amorphous CoFeSiB Free Layer

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