NDLI: Characterization of an AlO<formula formulatype=inline><tex Notation=TeX>$_{rm x}$</tex></formula> Tunneling Barrier in a Magnetic Tunnel Junction by a Surface Plasmon Resonance Spectroscopy Technique

Content Provider	IEEE Xplore Digital Library
Author	Ki Woong Kim Ja Hyun Koo Il Jae Shin Sik Kwak, J. Jin Pyo Hong Seok Jong Woo
Copyright Year	1965
Abstract	We measured tunneling magnetoresistance (TMR) in a magnetic tunnel junction as a function of temperature. We used surface plasmon resonance spectroscopy (SPRS)-one of the most useful tools in the analysis of dielectric function in a thin tunneling barrier-to study the correlation of AlO_x barrier quality with the temperature dependent behavior of the TMR ratio. The experimental SPRS analysis suggests that the decrease of the TMR ratio starting at 150 K is caused by residual Al metallic defects distributed within the insulating AlO_x barrier. We checked this result by measuring the junction resistances in parallel and antiparallel states.
Sponsorship	IEEE Magnetics Society
Starting Page	60
Ending Page	63
Page Count	4
File Size	469966
File Format	PDF
ISSN	00189464
Volume Number	45
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling magnetoresistance Dielectric measurements Magnetic tunneling Plasmons Magnetic resonance imaging Electrochemical impedance spectroscopy Magnetic analysis Temperature dependence Insulation Electrical resistance measurement tunneling Magnetic random access memory magnetoresistance temperature measurement
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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