NDLI: Spin-transfer switching current distribution and reduction in magnetic tunneling junction-based structures

Content Provider	IEEE Xplore Digital Library
Author	Yiming Huai Pakala, M. Zhitao Diao Yunfei Ding
Copyright Year	1965
Abstract	Spin transfer switching current distribution within a cell and switching current reduction were studied at room temperature for magnetic tunnel junction-based structures with resistance area product (RA) ranged from 10 to 30 /spl Omega/-/spl mu/m/sup 2/ and TMR of 15%-30%. These were patterned into current perpendicular to plane configured nanopillars having elliptical cross sections of area /spl sim/0.02 /spl mu/m/sup 2/. The width of the critical current distribution (sigma/average of distribution), measured using 30 ms current pulse, was found to be 3% for cells with thermal factor (KuV/k/sub B/T) of 65. An analytical expression for probability density function p(I/I/sub c0/) was derived considering a thermally activated spin transfer model, which supports the experimental observation that the thermal factor is the most significant parameter in determining the within-cell critical current distribution. Spin-transfer switching current reduction was investigated through enhancing effective spin polarization factor /spl eta//sub eff/ in magnetic tunnel junction-based dual spin filter (DSF) structures. The intrinsic switching current density (J/sub c0/) was estimated by extrapolating experimental data of critical current density (J/sub c/) versus pulse width (/spl tau/), to a pulse width of 1 ns. A reduction in intrinsic switching current density for a dual spin filter (DSF: Ta/PtMn/CoFe/Ru/CoFeB/Al2O3/CoFeB/spacer/CoFe/PtMn/Ta) was observed compared to single magnetic tunnel junctions (MTJ: Ta/PtMn/CoFe/Ru/CoFeB/Al2O3/CoFeB/Ta). J/sub c/ at /spl tau/ of 1 ns (/spl sim/J/sub c0/) for the MTJ and DSF samples were 7/spl times/10/sup 6/ and 2.2/spl times/10/sup 6/ A/cm/sup 2/, respectively, for identical free layers. Thus, a significant enhancement of the spin transfer switching efficiency is seen for DSF structure compared to the single MTJ case.
Sponsorship	IEEE Magnetics Society
Starting Page	2621
Ending Page	2626
Page Count	6
File Size	392747
File Format	PDF
ISSN	00189464
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic switching Current distribution Magnetic tunneling Space vector pulse width modulation Thermal factors Magnetic separation Critical current Pulse measurements Filters Current density spin-torque Magnetic random access memory (MRAM) magnetic tunnel junctions spin-transfer switching
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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