NDLI: Inverse magnetoresistance in magnetic tunnel junction with an Fe/sub 3/O/sub 4/ electrode

Content Provider	IEEE Xplore Digital Library
Author	Park, C. Jian-Gang Zhu Yingguo Peng Laughlin, D.E. White, R.M.
Copyright Year	1965
Abstract	Magnetic tunnel junctions (MTJ) with a plasma-oxidized Fe electrode have been fabricated on oxidized silicon wafers with standard photolithography. High-resolution transmission electron microscopy (HRTEM) and diffraction patterns show that a thin Fe layer can be oxidized by a controlled oxygen plasma into pure Fe/sub 3/O/sub 4/ without other crystallographic phases such as FeO and Fe/sub 2/O/sub 3/. To grow Fe/sub 3/O/sub 4/ directly in contact with an AlOx barrier, we began with Fe layers that varied from 1.8 to 5 nm. It was found that complete oxidation only occurred for the 1.8-nm thickness. Magnetic and electrical transport properties on the MTJs were measured at room temperature and low temperature (110 K). When the layer adjacent to the AlOx barrier was Fe/sub 3/O/sub 4/, inverse magnetoresistance (MR) behavior was observed, which is what is expected from the band structure of Fe/sub 3/O/sub 4/. However, when free Fe exists due to incomplete oxidation, positive MR behavior is observed.
Sponsorship	IEEE Magnetics Society
Starting Page	2691
Ending Page	2693
Page Count	3
File Size	752467
File Format	PDF
ISSN	00189464
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling magnetoresistance Magnetic tunneling Iron Oxidation Temperature measurement Plasma temperature Electrodes Silicon Lithography Electrons magnetoresistance ratio Half-metal magnetite magnetic tunnel junction (MTJs)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Interface States in the Full-Oxide Fe$_{3}$O$_{4}$–MgO–Fe$_{3}$O $_{4}$ Magnetic Tunnel Junction

Interfacial composition and microstructure of Fe/sub 3/O/sub 4/ magnetic tunnel junctions

Temperature and Bias-Assisted Transport Properties of LSMO/AlO/CoFeB Magnetic Tunnel Junction

High tunnel magnetoresistance in epitaxial Co/sub 2/Cr/sub 0.6/Fe/sub 0.4/Al/MgO/CoFe tunnel junctions

Dependence of tunneling magnetoresistance on CoFe interfacial layer thickness in NiFe/Al/sub 2/O/sub 3//NiFe tunnel junctions

Structural Characterization and Temperature Dependence of Tunnel Magnetoresistance in Epitaxial Fe/MgO/Fe Junctions

Characteristics of the Al/sub 2/O/sub 3/ barrier with CoFeB pinned Layer in magnetic tunnel junctions

Enhanced tunnel magnetoresistance by hf-layer insertion in the AlO/sub x/ tunnel barriers

Effects of temperature, deposition conditions, and magnetic field on Ni/sub 80/Fe/sub 20//Fe/sub 50/Mn/sub 50//Ni/sub 80/Fe/sub 20//Al/sub 2/O/sub 3//Co and Ni/sub 80/Fe/sub 20//Al/sub 2/O/sub 3//Co magnetic tunnel junctions

Inverse magnetoresistance in magnetic tunnel junction with an Fe/sub 3/O/sub 4/ electrode

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Interface States in the Full-Oxide Fe$_{3}$O$_{4}$–MgO–Fe$_{3}$O $_{4}$ Magnetic Tunnel Junction

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Temperature and Bias-Assisted Transport Properties of LSMO/AlO/CoFeB Magnetic Tunnel Junction

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Characteristics of the Al/sub 2/O/sub 3/ barrier with CoFeB pinned Layer in magnetic tunnel junctions

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Inverse magnetoresistance in magnetic tunnel junction with an Fe/sub 3/O/sub 4/ electrode