NDLI: High tunnel magnetoresistance in epitaxial Co/sub 2/Cr/sub 0.6/Fe/sub 0.4/Al/MgO/CoFe tunnel junctions

Content Provider	IEEE Xplore Digital Library
Author	Marukame, T. Kasahara, T. Matsuda, K.-I. Uemura, T. Yamamoto, M.
Copyright Year	1965
Abstract	We have fabricated fully epitaxial magnetic tunnel junctions (MTJs) using a Co-based full-Heusler alloy Co/sub 2/Cr/sub 0.6/Fe/sub 0.4/Al (CCFA) thin film and an MgO tunnel barrier. The CCFA thin film for the lower ferromagnetic electrode was deposited by magnetron sputtering on an MgO-buffered MgO single-crystal substrate, and the MgO tunnel barrier was formed by electron beam evaporation. The microfabricated epitaxial CCFA/MgO/CoFe MTJs showed high tunnel magnetoresistance ratios of 42% at room temperature and 74% at 55K.
Sponsorship	IEEE Magnetics Society
Starting Page	2603
Ending Page	2605
Page Count	3
File Size	358605
File Format	PDF
ISSN	00189464
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tunneling magnetoresistance Magnetic tunneling Sputtering Aluminum alloys Chromium alloys Cobalt alloys Iron alloys Magnetic films Electrodes Substrates tunnel magnetoresistance (TMR) Co epitaxial growth full Heusler alloy half-metallic ferromagnet (HMF) magnetic tunnel junction (MTJ) MgO
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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High tunnel magnetoresistance in epitaxial Co/sub 2/Cr/sub 0.6/Fe/sub 0.4/Al/MgO/CoFe tunnel junctions