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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chando Park Yiming Shi Yingguo Peng Barmak, K. Jian-Gang Zhu Laughlin, D.E. White, R.M. |
| Copyright Year | 1965 |
| Abstract | Magnetic tunnel junctions with an Fe/sub 3/O/sub 4/ top electrode have been fabricated. High resolution transmission electron microscopy (HRTEM) shows that in as-deposited state, Fe and FeO phases exist at the interface. These two phases are believed to have formed as a result of the unstable plasma condition at the start of the Fe/sub 3/O/sub 4/ deposition. A relatively low magnetoresistance ratio (MR) (3.5%) and low switching field (H/sub C2/) (40 Oe) is observed which is associated with the fact that the FeO phase magnetically isolates the Fe phase from the Fe/sub 3/O/sub 4/ phase at the interface. After annealing at 150/spl deg/C for 5 h, the MR as well as the switching field (H/sub C2/) increases by a factor of two. HRTEM shows that the FeO phase at the interface has transformed into Fe and Fe/sub 3/O/sub 4/ in the annealed sample, resulting in the increased MR (7.0%) and higher switching field (H/sub C2/) (300 Oe). However, annealing does not completely remove Fe at the interface, thereby limiting the MR. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 2806 |
| Ending Page | 2808 |
| Page Count | 3 |
| File Size | 525067 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 39 |
| Issue Number | 5 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-09-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Microstructure Iron Magnetic tunneling Electrodes Magnetic materials Plasma temperature Annealing Sputtering Transmission electron microscopy Magnetoresistance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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