NDLI: Using Molecular Modeling to Understand Cleaner Efficiency for Barc ("Bottom Anti-Reflective Coating") After Plasma Etch in Dual Damascene Structures

Content Provider	IEEE Xplore Digital Library
Author	Iwamotoa, N. Yellowaga, D. Larson, A. Palmer, B. Baldwin Hendricks, T.
Copyright Year	2007
Description	Author affiliation: Honeywell Specialty Mater., Ramona, CA (Iwamotoa, N.)
Abstract	The invention of inorganic bottom anti-reflective coatings (BARCs) was a promising enabling technology for lithography due to their near unity plasma etch selectivities with the low-k dielectric materials used in advanced via first trench last (VFTL) dual damascene structures. Having these selectivities during plasma etch allowed for the avoidance of via "fence" defects that are often created by the shadowing of the dielectric surrounding the vias by the slower etching organic BARC via fill. The presence of "fence" defects creates an area of high stress in the copper line due to the tight space between the fence and side of the trench that has to be filled, and can cause failure of the device due to shorting of the line from voids caused by copper migration away from the high stress area. In order to achieve a 1:1 selectivity in plasma etch which avoids fence formation, organosiloxane polymers are typically employed in the inorganic BARC materials. However, modification of the organosiloxane film during plasma etching and ashing densifies the material and may also remove organic content from the film, making removal more difficult with traditional cleaning technologies. This work describes the surface energy and reactivity modeling of the Honeywell cleaner technology that has demonstrated an inorganic BARC removal solution with significantly higher removal rates and etch selectivities compared to currently available products. We will show how molecular modeling influenced the development of the cleaner formulation and the impact on experiments.
Starting Page	1
Ending Page	6
File Size	5426053
Page Count	6
File Format	PDF
ISBN	142441105X
DOI	10.1109/ESIME.2007.360049
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-04-16
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Coatings Plasma applications Etching Plasma materials processing Stress Copper Plasma density Plasma devices Lithography Dielectric materials
Content Type	Text
Resource Type	Article

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