NDLI: A Mathematical Technique to estimate the High Frequency Current Inside the Silicon Die from the Noise Measurements

Content Provider	IEEE Xplore Digital Library
Author	Bhattacharyya, B.K. Gang Huo
Copyright Year	2007
Description	Author affiliation: Bidyut K. Bhattacharyya (IEEE Fellow), Gang Huo Intel Corp., Hillsboro, OR (Bhattacharyya, B.K.; Gang Huo)
Abstract	In this paper, we have shown a method to determine the current drawn by the device as a function of time. It is normally difficult to determine the switching current drawn by the device as a function of time. In this paper, the current drawn by the device is determined by measuring the voltage (Vx) at some desire location on the top of the device and then by simulating the impedance profile from the basic topology of the power delivery network. The L, C and R of the power deliver network were assumed as the fundamental parameters of our methodology. In our methodology, some of the AC parameters of power delivery network including the average current drawn by the device, the average voltage at the measuring node and the steady power supply voltage, were assumed to be known.
Starting Page	1
Ending Page	4
File Size	305767
Page Count	4
File Format	PDF
ISBN	142441105X
DOI	10.1109/ESIME.2007.359959
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-04-16
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency estimation Silicon Noise measurement Clocks Noise generators Current measurement Power measurement Voltage measurement Resonance Resonant frequency
Content Type	Text
Resource Type	Article

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