NDLI: BSIM6 -- Benchmarking the Next-Generation MOSFET Model for RF Applications

Content Provider	IEEE Xplore Digital Library
Author	Dutta, A. Sirohi, S. Ethirajan, T. Agarwal, H. Chauhan, Y.S. Williams, R.Q.
Copyright Year	2014
Description	Author affiliation: Indian Inst. of Technol. Kanpur, Kanpur, India (Agarwal, H.; Chauhan, Y.S.) \|\| Semicond. R&D Center, IBM, Burlington, VT, USA (Williams, R.Q.) \|\| Semicond. R&D Center, IBM, Bangalore, India (Dutta, A.; Sirohi, S.; Ethirajan, T.)
Abstract	BSIM6 is the new Compact Model Coalition (CMC) standard bulk MOSFET model. It offers excellent fitting capability, accurate RF/analog simulations, and similar implementation features of the small dimension effects as included in the popular BSIM4 model. These features make BSIM6 a very desirable candidate for future nano-MOSFET simulations. In this work we evaluate the capabilities of the model and perform benchmark tests to assess the strengths of the model. Bulk 90nm technology MOSFET data is used to extract BSIM6 for analog/RF specific applications. Industry standard benchmark tests have been performed and results shown against the hardware data (where applicable). The model is found to correlate very well with hardware data and passes all important model quality benchmark tests for analog/RF applications.
Sponsorship	IEEE Comput. Soc.
Starting Page	421
Ending Page	426
File Size	675776
Page Count	6
File Format	PDF
ISBN	9781479925131
ISSN	10639667
DOI	10.1109/VLSID.2014.79
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-05
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor device modeling MOSFET Radio frequency Benchmark testing Logic gates Data models Mathematical model bulk MOSFET model compact model charge based model model benchmarking source-drain symmetry reciprocity BSIM
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Hardware and Architecture

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

BSIM compact MOSFET models for SPICE simulation

BSIM6: Analog and RF Compact Model for Bulk MOSFET

BSIM-IMG: Compact model for RF-SOI MOSFETs

Recent enhancements in BSIM6 bulk MOSFET model

Moderate inversion: Analog and RF benchmarking with the EKV3 compact model

Low-power RF modeling of a 40nm CMOS technology using BSIM6

BSIM-IMG: A Turnkey compact model for fully depleted technologies

RF benchmark tests for compact MOS models

Unified Compact Model Covering Drift-Diffusion to Ballistic Carrier Transport

BSIM6 -- Benchmarking the Next-Generation MOSFET Model for RF Applications

Similar Documents

BSIM compact MOSFET models for SPICE simulation

BSIM6: Analog and RF Compact Model for Bulk MOSFET

BSIM-IMG: Compact model for RF-SOI MOSFETs

Recent enhancements in BSIM6 bulk MOSFET model

Moderate inversion: Analog and RF benchmarking with the EKV3 compact model

Low-power RF modeling of a 40nm CMOS technology using BSIM6

BSIM-IMG: A Turnkey compact model for fully depleted technologies

RF benchmark tests for compact MOS models

Unified Compact Model Covering Drift-Diffusion to Ballistic Carrier Transport

BSIM6 -- Benchmarking the Next-Generation MOSFET Model for RF Applications