NDLI: Line edge roughness and spacing effect on low-k TDDB characteristics

Content Provider	IEEE Xplore Digital Library
Author	Chen, F. Lloyd, J.R. Chanda, K. Achanta, R. Bravo, O. Strong, A. McLaughlin, P.S. Shinosky, M. Sankaran, S. Gebreselasie, E. Stamper, A.K. He, Z.X.
Copyright Year	2008
Description	Author affiliation: IBM Microelectron., Essex Junction, VT (Chen, F.)
Abstract	The study of low-k TDDB line space scaling is important for assuring robust reliability for new technologies. Although spacing effects due to line edge roughness (LER) on low-k TDDB lifetime were reported previously (Chen et al., 2007; Lloyd et al., 2007; Kim et al., 2007), there has been a lack of an analytical model with which to link line edge roughness to experimental TDDB data in a simple quantitative format. This work reports a thorough investigation into the low-k SiCOH line LER effect on low-k TDDB covering both experimental results and finite element modeling (FEM) simulations. The maximum electric field intensity as a result of sidewall LER bump was found to depend on the bump curvature. The decrease of low-k line spacing that resulted in a shorter TDDB lifetime even under the same applied electric field was then carefully analyzed. A simple analytical model of the effect of line edge roughness on TDDB failure time reduction is presented. This model was verified by experimental results. Additionally, a method to electrically quantify an overall line edge roughness is introduced.
Starting Page	132
Ending Page	137
File Size	434799
Page Count	6
File Format	PDF
ISBN	9781424420490
DOI	10.1109/RELPHY.2008.4558874
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-27
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Breakdown voltage Integrated circuit interconnections Stress Acceleration Analytical models Dielectric breakdown Dielectric materials Microelectronics Space technology Microscopy ILD time-dependent dielectric breakdown Cu interconnect line edge roughness reliability macroscopic line-to-line spacing variation microscopic line-to-line spacing variation spacing scaling low-k
Content Type	Text
Resource Type	Article

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