NDLI: Physical framework for NBTI: Insight from ultra-fast switching measurement of NBTI recovery

Content Provider	IEEE Xplore Digital Library
Author	Du, G.A. Ang, D.S. Hu, Y.Z. Wang, S. Ng, C.M.
Copyright Year	2008
Description	Author affiliation: Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore (Du, G.A.; Ang, D.S.; Hu, Y.Z.; Wang, S.)
Abstract	Using an ultra-fast switching measurement method, the mechanism of NBTI recovery in the first few seconds after stress termination is systematically studied. Results show: (1) A component of the fast $\|DeltaV_{t}\|$ recovery increases with stress temperature; (2) the amount of $\|DeltaV_{t}\|$ recovery is (i) independent of stress time under a negative gate recovery voltage, but (ii) increases with stress time for a positive gate recovery voltage. These observations suggest the following physical framework for NBTI: (1) Dynamic balance of rapid inelastic trapping and detrapping of holes in a narrow energy band above Si valence band edge, which accounts for the fast recovery observed, independent of stress time and (2) generation of interface states and interfacial deep-level positive trap states (above Si mid-gap) which exhibit time-dependent recovery under a positive gate recovery voltage.
Starting Page	735
Ending Page	736
File Size	312523
Page Count	2
File Format	PDF
ISBN	9781424420490
DOI	10.1109/RELPHY.2008.4559013
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-27
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Niobium compounds Titanium compounds Electron traps Voltage Stress Interface states MOSFET circuits Temperature dependence Energy states Electric variables measurement
Content Type	Text
Resource Type	Article

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