NDLI: The Effect of Metal Area and Line Spacing on TDDB Characteristics of 45nm Low-k SiCOH Dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Chen, F. McLaughlin, P. Gambino, J. Wu, E. Demarest, J. Meatyard, D. Shinosky, M.
Copyright Year	2007
Description	Author affiliation: IBM Microelectron., Essex Junction, VT (Chen, F.)
Abstract	Low-k time-dependent dielectric breakdown (TDDB) is rapidly becoming one of the most important reliability issues in Cu/low-k technology development and qualification. Although considerable progress has been made in recent years in addressing the electric field dependence of low-k time-to-breakdown (tBD), there has been very little comprehensive work done on the effect of metal area and line spacing on low-k TDDB. The lifetime of a product chip is typically obtained by extrapolating TDDB data from small test structures to large chip areas, and the low-k TDDB line spacing scaling rule normally should be considered for the definition of operating voltages for various technologies to assure long-term reliability. Therefore, both area scaling and line spacing scaling relations are of great importance, in order to have a robust technology qualification. In this study, a thorough investigation into the 45 nm low-k SiCOH TDDB was conducted in order to understand the breakdown failure statistics, to model the area dependence, and to explore the line spacing scaling. With the help of experimental results and computational simulations, the effect of line-to-line spacing on low-k TDDB was clearly identified and a methodology for accurate determination of Weibull shape factor is proposed.
Starting Page	382
Ending Page	389
File Size	1098030
Page Count	8
File Format	PDF
ISBN	1424409187
DOI	10.1109/RELPHY.2007.369920
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric breakdown Copper Stress Shape Dielectric materials Qualifications Materials reliability Acceleration Statistical distributions Microelectronics spacing variation time-dependent dielectric breakdown Cu interconnect reliability Weibull distribution Log-normal distribution area scaling spacing scaling low-k ILD
Content Type	Text
Resource Type	Article

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