NDLI: SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection

Content Provider	IEEE Xplore Digital Library
Author	O'Connor, R. Pantisano, L. Degraeve, R. Kauerauf, T. Kaczer, B. Roussel, P.J. Groeseneken, G.
Copyright Year	2008
Description	Author affiliation: IMEC, Leuven (O'Connor, R.; Pantisano, L.; Degraeve, R.; Kauerauf, T.; Kaczer, B.; Roussel, P.J.; Groeseneken, G.)
Abstract	In this work we present a novel trap spectroscopy based on stress induced leakage current measurements for constant voltage stress and substrate hot carrier injection stresses in nMOSFET devices. Peaks in the stress induced leakage current at several gate voltages are attributed specifically to defects in the bulk and at the interface by using the substrate hot electron injection technique to specifically create defects in different spatial locations. Our results show that low energy carriers preferentially creates defects which are deep in the bandgap but close to the interface, while injection into the HfSiON conduction band creates bulk defects approximately aligned with the Si conduction band.
Starting Page	324
Ending Page	329
File Size	309870
Page Count	6
File Format	PDF
ISBN	9781424420490
DOI	10.1109/RELPHY.2008.4558906
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-27
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spectroscopy Substrate hot electron injection Leakage current Electron traps Current measurement Voltage measurement Stress measurement Hot carrier injection MOSFET circuits Photonic band gap
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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