NDLI: Reliability issues in MuGFET nanodevices

Content Provider	IEEE Xplore Digital Library
Author	Groeseneken, G. Crupi, F. Shickova, A. Thijs, S. Linten, D. Kaczer, B. Collaert, N. Jurczak, M.
Copyright Year	2008
Description	Author affiliation: IMEC, Leuven (Groeseneken, G.; Crupi, F.; Shickova, A.; Thijs, S.; Linten, D.; Kaczer, B.; Collaert, N.; Jurczak, M.)
Abstract	In this paper we review some recent results on reliability of MuGFET nanodevices with different gate stacks, including polycrystalline-Si/SiON as well as deposited metal gate/high-k stacks. In the first part we show how we can get information on the interface quality of the sidewall and top interface of the devices, by using an adapted charge pumping technique on gated diode structures. Then we compare the TDDB behavior of MuGFET and planar devices and we will show that if adequate processing is used, the triple-gate architecture does not alter the behavior of the time-dependent dielectric breakdown for different gate voltages and temperatures. Next we discuss the Bias Temperature Instability (BTI) behavior of MuGFET CMOS devices. Novel interface passivation techniques as well as the impact of different dielectric nitridation techniques on BTI are discussed, showing similar BTI dependence on Nitrogen incorporated in MuGFET dielectrics as in planar devices. Finally we also discuss the ESD performance of MuGFET devices and we demonstrate that reasonable intrinsic ESD performance can be obtained, but achieving this desired ESD-robustness is found to be critically dependent on various design and process parameters. As a result the design of ESD protection for FinFET technology appears to be a challenging task for the future.
Starting Page	52
Ending Page	60
File Size	742013
Page Count	9
File Format	PDF
ISBN	9781424420490
DOI	10.1109/RELPHY.2008.4558863
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-27
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrostatic discharge Temperature Dielectric devices High K dielectric materials High-K gate dielectrics Charge pumps Diodes Dielectric breakdown Breakdown voltage Passivation Interface characterization Multiple gate devices MuGFET TDDB Bias-Temperature Instability Electrostatic Discharge
Content Type	Text
Resource Type	Article

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