NDLI: Degradation of solution based metal induced laterally crystallized p-type poly-Si TFTS under DC bias stresses

Content Provider	IEEE Xplore Digital Library
Author	Chunfeng Hu Mingxiang Wang Meng Zhang Bo Zhang Man Wong
Copyright Year	2008
Description	Author affiliation: Dept. of Microelectron., Soochow Univ., Suzhou (Chunfeng Hu; Mingxiang Wang; Meng Zhang)
Abstract	Device degradation of solution based metal-induced laterally crystallized (MILC) p-type poly-Si thin film transistors (TFTs) is studied under DC bias stresses, which is found to be dominated by negative bias temperature instability (NBTI) mechanism. While standard NBTI or electron injection (EI) is observed under $-V_{g}$ or $-V_{d}$ only stress, respectively, a mixed NBTI and EI degradation is observed under combined low $-V_{g}$ and $-V_{d}$ stresses. Under high $-V_{d}$ and moderate $-V_{g}$ stress, pure hot carrier (HC) degradation cannot be observed, but a combined degradation of NBTI and HC occurs. Grain boundary (GB) trap generation is found to correlate with the NBTI degradation with the same time exponent, suggesting the key role of GB trap generation in poly-Si TFTspsila degradation.
Starting Page	363
Ending Page	367
File Size	362344
Page Count	5
File Format	PDF
ISBN	9781424420490
DOI	10.1109/RELPHY.2008.4558913
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-27
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Crystallization Stress Niobium compounds Titanium compounds Thin film transistors Negative bias temperature instability Electrons Hot carriers Grain boundaries hot carrier poly-Si TFTs NBTI electron injection
Content Type	Text
Resource Type	Article

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