NDLI: New hot-carrier degradation phenomenon in nano-scale floating body MOSFETS

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New hot-carrier degradation phenomenon in nano-scale floating body MOSFETS

Content Provider	IEEE Xplore Digital Library
Author	Yang, J.-W. Harris, H.R. Kang, C.Y. Young, C.D. Lee, K.T. Lee, H.D. Bersuker, G. Lee, B.H. Tseng, H.-H. Jammy, R.
Copyright Year	2008
Description	Author affiliation: SEMATECH, Austin, TX (Yang, J.-W.; Harris, H.R.; Kang, C.Y.; Young, C.D.)
Abstract	New hot-carrier degradation phenomenon that depends on gate bias in nano-scale floating body MOSFETs is identified using 2-D device simulation and hot-carrier injection measurements. In the case of sufficiently high gate voltage, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension resulting in impact ionization at the source as well as drain junctions. Hot carrier stress with accelerated gate voltage may lead to an incorrect estimation of lifetime in nano-scale floating body MOSFETs.
Starting Page	739
Ending Page	740
File Size	181964
Page Count	2
File Format	PDF
ISBN	9781424420490
DOI	10.1109/RELPHY.2008.4559015
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-27
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers Degradation MOSFETs Voltage Nanoscale devices Hot carrier injection Impact ionization Stress Acceleration Life estimation
Content Type	Text
Resource Type	Article

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