NDLI: A high-Q AlGaN/GaN phonon trap with integrated hemt read-out

Content Provider	IEEE Xplore Digital Library
Author	Ansari, A. Tabrizian, R. Rais-Zadeh, M.
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. Eng., Univ. of Michigan, Ann Arbor, MI, USA (Ansari, A.; Tabrizian, R.; Rais-Zadeh, M.)
Abstract	This paper presents novel phonon traps, the main building blocks of self-sustained all-GaN oscillators, implemented on an AlGaN/GaN electro-acoustic platform. The geometry of acoustic cavities has been engineered to efficiently trap the energy in the central region of devices, where the interdigitated excitation/sense electrodes and HEMT read-outs are located. Such an energy trapping method obviates the need for narrow tethers. This facilitates routing of multiple lines connected to the source, gate, and drain of the read-out HEMTs as well as allowing co-integration of different interdigitated transducer (IDT) sets for efficient piezoelectric lateral field excitation. Furthermore, elimination of narrow tethers improves the power handling capability of the GaN resonators, making them suitable for high-power applications. Two types of AlGaN/GaN-based devices are discussed in this work, both operating in the ninth-order width-extensional mode that is excited using Schottky IDTs. In the first device, another set of Schottky IDTs it used for sensing, while the second device utilizes a HEMT to read-out the signal. An unloaded quality factor (Q) of ~13,000 has been measured at room temperature and atmospheric pressure for a device operating at ~740 MHz, resulting in a frequency × Q value of $0.96×10^{13},$ which is the highest value reported to date for GaN-based resonators and is very close to the intrinsic limits for AlN and GaN, set by phonon-phonon interactions.
Starting Page	2256
Ending Page	2259
File Size	1445575
Page Count	4
File Format	PDF
ISBN	9781479989553
ISSN	21641641
DOI	10.1109/TRANSDUCERS.2015.7181411
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs Gallium nitride Acoustics Aluminum gallium nitride Wide band gap semiconductors Phonons Cavity resonators Q phonon trap resonator
Content Type	Text
Resource Type	Article

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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