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Content Provider | IEEE Xplore Digital Library |
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Author | Chen, Y. Huang, H.Y. Xu, P.C. Zheng, D. Li, X.X. |
Copyright Year | 2015 |
Description | Author affiliation: Sch. of Chem. & Environ. Eng., Shanghai Inst. of Technol., Shanghai, China (Huang, H.Y.; Zheng, D.) || State Key Lab. of Transducer Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China (Chen, Y.; Xu, P.C.; Li, X.X.) |
Abstract | This paper, for the first time, reports the nano-size effect of ZnO nanowire (NW) on reversible sulfuration-desulfuration reaction process. ZnO NWs with diameter of 50nm are recently found to be sulfurated by $H_{2}S$ to form ZnS, which can be latterly desulfurized by ambient oxygen back to ZnO when $H_{2}S$ is removed. This sensing mechanism is different from the widely used conventional one for reductive gases like $H_{2}S$ [1]. Based on the nano-material property, higher sensitivity of ZnO NW to ultra-low concentration $H_{2}S$ is expected by size shrinking. A novel nano-structure of tree-branch ZnO NWs, with the branch diameter as 20nm, is in situ grown at the hot-plate of a micro-sensor. Both the 20nm ZnO-NWs sensor and the 50nm sensor are compared by experiment, resulting in good validation of the nano-size effect. The tree-branched 20nm ZnO-NWs sensor exhibits resoluble sensing to 20ppb $H_{2}S.$ |
Starting Page | 965 |
Ending Page | 968 |
File Size | 3659770 |
Page Count | 4 |
File Format | |
ISBN | 9781479989553 |
ISSN | 21641641 |
DOI | 10.1109/TRANSDUCERS.2015.7181085 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2015-06-21 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | II-VI semiconductor materials Zinc oxide Temperature sensors Resistance Electrodes H |
Content Type | Text |
Resource Type | Article |
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