NDLI: A new sturcture AlGaN/GaN HEMT

Content Provider	IEEE Xplore Digital Library
Author	Zhe Cheng Yun Zhang
Copyright Year	2015
Description	Author affiliation: Solid-State Lighting R&D Center, Beijing Eng. Res. Center for the 3rd Generation Semicond. Mater. & Applic., Beijing, China (Zhe Cheng; Yun Zhang)
Abstract	In several decades, the world has witnessed various dramatic changes since applying of semiconductor. The performance requirements of semiconductor products are continue increasing while the technology is improving. In order to satisfy the requirements, the researches of new material and device structure is necessary. This paper shows a new structure of GaN HEMT. An AlGaN/GaN HEMT consists of AlGaN/GaN Heterojunction, drain electrode, source electrode and gate electrode. Though the researchers have reported a large number of HEMT structures since M. Asif Khan and his colleagues repot the first AlGaN/GaN HEMT in 1993, there is none of the structures, which three electrodes are in different surfaces of device. This paper describes a new structure called different-surface-gate structure, which drain and source electrodes are on the other surface while the gate electrode is on the top surface (AlGaN surface) of the device as normal HEMTs. This paper will establish two models by TCAD simulation software. One is the model of different-surface-gate AlGaN/GaN HEMT and the other one is normal structure AlGaN/GaN HEMT, which is the control model. After building the models, the compare of the models will show the saturation current of the different-surface-gate model is 120% as large as it of the other model.
Starting Page	157
Ending Page	159
File Size	293763
Page Count	3
File Format	PDF
ISBN	9781509001750
e-ISBN	9781509001767
DOI	10.1109/SSLCHINA.2015.7360713
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-11-02
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrodes HEMTs Logic gates Heterojunctions Wide band gap semiconductors Gallium nitride Aluminum gallium nitride
Content Type	Text
Resource Type	Article

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