NDLI: Maskless method to selectively etch Parylene-C from high aspect ratio neural devices

Content Provider	IEEE Xplore Digital Library
Author	Leber, M. Shandhi, M.M.H. Bhandari, R. Negi, S.
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Univ. of Utah, Salt Lake City, UT, USA (Leber, M.; Shandhi, M.M.H.; Negi, S.) \|\| Blackrock Microsyst., Salt Lake City, UT, USA (Bhandari, R.)
Abstract	Neural interfaces connect signal processing electronics to the nervous system via implanted microelectrode arrays such as the Utah electrode array (UEA). The UEA is coated with a biocompatible Parylene-C layer. However, in order to form active sites, Parylene-C is removed from the electrode tips of the UEA. Currently, this is achieved by manually punching aluminum foil through the electrodes to the desired length and subsequent etching of Parylene-C in oxygen plasma. This method is not only operator dependent, but also results in non-uniform tip exposure in the array. This paper examines a novel maskless approach of selectively desinsulating the tips of the UEA by using the unique architecture of the UEA (aspect ratio 15:1) in its favor. This is achieved by biasing the back-plane of the UEA to the DC bias voltage resulting from the reactive ion etching (RIE) process. During the RIE the electric field is stronger at the tip of the electrode, leading to higher concentration of the oxygen plasma at the tip. As a result, the Parylene-C is selectively etched from the tip. The etching rate is controlled by the inductively coupled plasma (ICP) power, which controls the oxygen plasma density around the tip. The process yields high controllability and reproducibility in selectively etching the tips of the UEA. Furthermore, this method can be applied to other high aspect ratio structures, which have sharp tips.
Starting Page	1303
Ending Page	1306
File Size	1556228
Page Count	4
File Format	PDF
ISBN	9781479989553
ISSN	21641641
DOI	10.1109/TRANSDUCERS.2015.7181170
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Electrodes Electric fields Iterative closest point algorithm Radio frequency Plasmas Substrates Maskless Etching Reactive Ion Etching (RIE) Parylene-C Neural Microelectrodes
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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