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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ke-Jia Qian Qing-Qing Sun Shi-Jin Ding Wei Zhang |
| Copyright Year | 2010 |
| Description | Author affiliation: State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China (Ke-Jia Qian; Qing-Qing Sun; Shi-Jin Ding; Wei Zhang) |
| Abstract | F-doped SiOCN films with low dielectric constant have been prepared using SiH, C and NO as reactants by PECVD, and characterized by X-ray photoelectron spectroscopy (XPS), capacitance -voltage (C-V) and current-voltage (I–V) measurements, and nano-indenter. With an increment of the flow rate of C, the concentrations of fluorine and carbon incorporated in the films increase, and the concentration of nitrogen decreases. This leads to a decrease in the dielectric constant of the film. When the flow rate of C is 750 sccm, the percentages of C and F elements amount to 5.2% and 9.9%, respectively. Meanwhile, the resulting dielectric constant is reduced to 2.6, and the leakage current density is lower than $3×10^{−8}$ $A/cm^{2}$ at 1MV/cm. The hardness and Young's modulus of the films are higher than 3 GPa and 84 GPa, respectively. It is thus believed that the introduction of carbon and fluorine can lower the dielectric constant of the films, and the presence of N can improve the mechanical properties of film. |
| Starting Page | 1003 |
| Ending Page | 1005 |
| File Size | 480381 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424457977 |
| e-ISBN | 9781424457984 |
| DOI | 10.1109/ICSICT.2010.5667518 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-11-01 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Films Dielectric constant Leakage current Mechanical factors Thermal stability Dielectric measurements |
| Content Type | Text |
| Resource Type | Article |
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