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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lifeng Liu Bin Gao Bing Chen Yuansha Chen Yi Wang Jinfeng Kang Ruqi Han |
| Copyright Year | 2010 |
| Description | Author affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China (Lifeng Liu; Bin Gao; Bing Chen; Yuansha Chen; Yi Wang; Jinfeng Kang; Ruqi Han) |
| Abstract | Resistive switching characteristics of Ag/SiO/Pt memory cells with different set current compliance are studied. Ag/SiO/Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage (<0.5V), low operation current (∼1µA), high resistance ratio $(10^{4})$ and good retention characteristic. Co-existence of bipolar and unipolar resistance switching is observed in Ag/SiO/Pt cells with high set current compliances. The resistive switching mechanisms in Ag/SiO/Pt cells are discussed. |
| Starting Page | 1157 |
| Ending Page | 1159 |
| File Size | 381472 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424457977 |
| e-ISBN | 9781424457984 |
| DOI | 10.1109/ICSICT.2010.5667586 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-11-01 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Resistance Electrodes Films Silicon Optical switches Solids |
| Content Type | Text |
| Resource Type | Article |
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