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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tao Chen Ming Hu Lei Tan Liu-Chen Wang Li Li |
| Copyright Year | 2010 |
| Description | Author affiliation: Sensitive Materials & Sensors Lab, School of Electronic Information Engineering, Tianjin University, 300072, China (Tao Chen; Ming Hu; Lei Tan; Liu-Chen Wang; Li Li) |
| Abstract | Vanadium oxide(VO) is one kind of mixture with different valences, and in addition to vanadium dioxide(VO), the optical properties of other vanadium oxidations with different valences get few attention. In the present study, VO thin film was grown on silicon substrates by direct current facing targets magnetron sputtering. VO thin film was characterized by XPS (X-ray photoelectron spectroscopy) to determine component, and by THz-TDS (THz Time-domain spectroscopy system) to determine optical transmission behavior in the 0.3∼2.5THz with the exciting laser of 532nm. The results show that, the main valences of VO thin film are +3,+4,+5, before and after continuous light excitation, a very significant change in THz transmission is observed. The optical transmission of VO thin film decreases by 60% after excitation. And finally, we briefly analyzed the switching performance with the energy band structure of VO. |
| Starting Page | 1560 |
| Ending Page | 1562 |
| File Size | 398871 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424457977 |
| e-ISBN | 9781424457984 |
| DOI | 10.1109/ICSICT.2010.5667471 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-11-01 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Laser excitation Optical switches Optical films Laser transitions Silicon Ultrafast optics Optical reflection THz-TDS VO |
| Content Type | Text |
| Resource Type | Article |
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