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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Murota, J. Sakuraba, M. Tillack, B. |
| Copyright Year | 2010 |
| Description | Author affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany (Tillack, B.) || Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan (Murota, J.; Sakuraba, M.) |
| Abstract | The concept of atomically controlled processing for group IV semiconductors is shown based on atomicorder surface reaction control in Si-based CVD epitaxial growth. Si epitaxial growth on B or P atomic layer formed on Si(100) or Si (100) surfaces, is achieved at temperatures below 500 °C. B doping dose of about $7×10^{14}$ $cm^{−2}$ is confined within an about 1 nm thick region, but the sheet carrier concentration is as low as 1.7 $×10^{13}$ $cm^{−2}.$ The in-situ B doping in tensile-strained Si epitaxial growth suggests that the low electrical activity is caused by B clustering as well as the increase of interstitial B atoms. For unstrained Si cap layer grown on top of the P atomic layer formed on Si(100) with P atom amount below about $4×10^{14}$ $cm^{−2}$ using Si instead of SiH, the incorporated P atoms are almost confined within 1 nm around the heterointerface. It is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P amount around the heterointerface. The electrical inactive P atoms are generated by tensile-strain in heavy P doped region. These results demonstrate that atomically controlled processing for doping is influenced by strain. |
| Starting Page | 1513 |
| Ending Page | 1516 |
| File Size | 659382 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424457977 |
| e-ISBN | 9781424457984 |
| DOI | 10.1109/ICSICT.2010.5667510 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-11-01 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Atomic layer deposition Epitaxial growth Doping Surface treatment Process control Strain |
| Content Type | Text |
| Resource Type | Article |
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