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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yi-Chou Chen Wei-Chih Chien Yu-Yu Lin Feng-Ming Lee Kuang-Yeu Hsieh Chih-Yuan Lu |
| Copyright Year | 2010 |
| Description | Author affiliation: Emerging Central Lab. Macronix International Co., Ltd., 16 Li-Hsin Rd. Hsinchu Science Park, Taiwan, R.O.C. (Yi-Chou Chen; Wei-Chih Chien; Yu-Yu Lin; Feng-Ming Lee; Kuang-Yeu Hsieh; Chih-Yuan Lu) |
| Abstract | Two types of ReRAM are investigated. The first is a CB-ReRAM (conducting bridge ReRAM) that uses metallic ions to form the bridge. This type of device is known to be unstable because the conducting bridge tends to self-destruct. By adding a buffer layer between the electrode and the electrolyte, the retention of the Cu-based CB-ReRAM is greatly improved while the superior electrical performance is preserved. The second is a TMO (transition metal oxide) type ReRAM. The WO-based TMO ReRAM is very simple and easily integrated, and shows excellent electrical properties for NVM applications. The mechanism of switching and conducting are also investigated in detail. |
| Starting Page | 1065 |
| Ending Page | 1068 |
| File Size | 827306 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424457977 |
| e-ISBN | 9781424457984 |
| DOI | 10.1109/ICSICT.2010.5667545 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-11-01 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electrodes Resistance Tin Switches Nickel Copper Buffer layers |
| Content Type | Text |
| Resource Type | Article |
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