NDLI: InN nanowires based multi-modal environmental sensors

Content Provider	IEEE Xplore Digital Library
Author	Wilson, A. Jahangir, I. Quddus, E.B. Singh, A.K. Koley, G.
Copyright Year	2013
Description	Author affiliation: Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA (Wilson, A.; Jahangir, I.; Quddus, E.B.; Singh, A.K.; Koley, G.)
Abstract	High quality InN nanowires (NWs) have been investigated for sensing applications. The NWs were synthesized using a novel approach that enhanced the cracking of $NH_{3}$ precursor and dramatically improving the growth rate and material quality. Field effect transistors (FETs) based on these high quality InN NWs showed excellent electrical characteristics and good average mobility (270 $cm^{2}/Vs).$ Preliminary sensing results for dilute acetone, diluted water vapor and $NO_{2}$ at various concentrations are very encouraging. Because of high carrier density and mobility, these NWs are also good candidates for field emission based sensing. During the field emission experiments, sharp change in NW current was observed when supplied voltage increased to 2 V for ~1μm distance between NW and plate, demonstrating the suitability of these NWs for gaseous detection based on the field emission method, and for multimodal sensing in combination with FET based sensing method.
Starting Page	1
Ending Page	4
File Size	1747198
Page Count	4
File Format	PDF
ISBN	9781467346429
ISSN	19300395
DOI	10.1109/ICSENS.2013.6688187
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-11-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sensors Field effect transistors Nanowires Gold Tunneling Logic gates Threshold voltage field emission InN nanowires sensors
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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