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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Weiquan Yang Becker, J. Ying-Shen Kuo Jing-Jing Li Shi Liu Landini, B. Campman, K. Yong-Hang Zhang |
| Copyright Year | 2013 |
| Description | Author affiliation: Sumika Electron. Mater., Inc., Phoenix, AZ, USA (Landini, B.; Campman, K.) || Center for Photonics Innovation, Arizona State Univ., Tempe, AZ, USA (Weiquan Yang; Becker, J.; Ying-Shen Kuo; Jing-Jing Li; Shi Liu; Yong-Hang Zhang) |
| Abstract | This paper proposes and demonstrates the use of a textured and lattice-matched semiconductor layer coated with a Au reflector for reflective back scattering to enhance the efficiency of single-junction solar cells with ultra-thin absorbers. The device structure studied in this work consists of an $In_{0.49}Ga_{0.51}P/GaAs/In_{0.49}Ga_{0.51}P$ double-heterostructure single-junction solar cell with a GaAs absorber of either 300 nm or 1000 nm thick, as well as a textured $Al_{0.52}In_{0.48}P$ layer coated with a highly reflective Au film. The devices, areas ranging from 0.3×0.3 $mm^{2}$ to 1×1 $mm^{2},$ are flip-chip bonded onto Si carrier substrates, covered by a contact metal grid (with a 9.7% or 10.7% shadow area for the 300 nm and 1000 nm devices, respectively) and a $MgF_{2}/ZnS$ anti-reflective coating. Both types of device designs demonstrate an open-circuit voltage of 1.00 V, short-circuit current densities of 24.5 and 26.1 $mA/cm^{2},$ and power conversion efficiencies of 19.1% and 20.6%, respectively; these measurements are carried out under 1 sun solar radiation (AM 1.5G, 0.1 $W/cm^{2}).$ It is reasonable to expect that the short-circuit current densities and conversion efficiencies of these devices could reach 26.6 $mA/cm^{2}$ and 28.6 $mA/cm^{2},$ and 20.7% and 22.6%, respectively, when a typical contact grid layout with 2% surface coverage is used. These short-circuit current densities are only 3.6 and 1.6 $mA/cm^{2}$ lower than the maximum theoretical value 30.2 $mA/cm^{2},$ respectively. |
| Sponsorship | IEEE Electron Devices Soc. |
| Starting Page | 3329 |
| Ending Page | 3332 |
| File Size | 363655 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/PVSC.2013.6745163 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Photovoltaic cells Coatings Scattering Surface texture Current measurement surface texture gallium arsenide photovoltaic cell thin film devices |
| Content Type | Text |
| Resource Type | Article |
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