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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Muralidharan, P. Vasileska, D. Goodnick, S.M. |
| Copyright Year | 2013 |
| Description | Author affiliation: Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA (Muralidharan, P.; Vasileska, D.; Goodnick, S.M.) |
| Abstract | This paper studies the potential of wide bandgap tunnel junctions such as AlGaAs/GaAs and GaAs/GaAs configurations for multi - junction solar cells. Simulations were performed to study the dominant physical mechanisms in tunnel junctions such as band to band tunneling and trap assisted tunneling. 1-D Drift Diffusion simulations were performed to determine the different regions in the I-V characteristics, namely, the tunneling current, excess current and classical diffusion current. We outline the implementation of local and non-local tunneling models to understand the nature of peak current. The variation of peak voltage is examined with the addition of band gap narrowing and different effective masses. |
| Sponsorship | IEEE Electron Devices Soc. |
| Starting Page | 2113 |
| Ending Page | 2117 |
| File Size | 3341920 |
| Page Count | 5 |
| File Format | |
| DOI | 10.1109/PVSC.2013.6744891 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Tunneling Photonic band gap Junctions Photovoltaic cells Effective mass Mathematical model III-V Semiconducting Materials Resonant Tunneling Devices Heterojunctions Numerical Simulation |
| Content Type | Text |
| Resource Type | Article |
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