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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jin Nyoung Jang Dong Hyeok Lee Chang-Sun Park Hyung-Ho Park MunPyo Hong |
| Copyright Year | 2013 |
| Description | Author affiliation: Dept. of Display & Semicond. Phys., Korea Univ., Sejong, South Korea (Jin Nyoung Jang; Dong Hyeok Lee; MunPyo Hong) || Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea (Chang-Sun Park; Hyung-Ho Park) |
| Abstract | The NBaCVD system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particles. During the deposition process, energetic H-neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction $(X_{c})$ ~85%) and dopant activation $(~1*10^{20}$ $#/cm^{3},$ ~30 $cm^{2}/Vs)$ with low H ratio at near room temperature on the substrate. Also the increase of H enhance transport path (mobility incensement) which is deduced from transition of crystal orientation from [111] to [311] at constant Xc. The various analysis data of the thin films (CAFM, GIWAXS) represent the evidence of obvious flat-type nc embedded pm phase, and grain dominant charge transport characteristics. |
| Sponsorship | IEEE Electron Devices Soc. |
| Starting Page | 0560 |
| Ending Page | 0562 |
| File Size | 926166 |
| Page Count | 3 |
| File Format | |
| DOI | 10.1109/PVSC.2013.6744213 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Crystals Plasma temperature Doping Films Particle beams Substrates silicon nanocrystalline charge carrier transport grain orientation transition |
| Content Type | Text |
| Resource Type | Article |
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