NDLI: High brightness InP micropillars grown on silicon with Fermi-level splits larger than 1 eV

Content Provider	IEEE Xplore Digital Library
Author	Tran, T. Hao Sun Fan Ren Kar Wei Ng Kun Li Fanglu Lu Yablonovitch, E. Chang-Hasnain, C.J.
Copyright Year	2013
Description	Author affiliation: Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA (Tran, T.; Hao Sun; Fan Ren; Kar Wei Ng; Kun Li; Fanglu Lu; Yablonovitch, E.; Chang-Hasnain, C.J.)
Abstract	The synthesis of III-V nanowires on silicon substrates is promising for reducing the manufacturing and balance-of-systems costs of III-V based photovoltaics. However, performances of III-V nanowire based solar cells have not yet been close to their bulk counterparts as nanostructures are fundamentally challenged by enhanced non-radiative losses due to their large surface-to-volume ratios, resulting in significantly reduced external fluorescence yields for spontaneous emission and therewith serious penalties in the open-circuit voltage. In this work, we report characteristics of micron-sized, single-crystalline, Wurzite-phased InP crystals directly grown on silicon substrates for photovoltaics applications. We found that under illumination intensities equivalent to 1 sun Fermi level splits can reach 0.89 eV in undoped InP pillars, 0.53 eV below the bandgap of wurtzite InP material at 1.42 e V. The brightness of pillars can be improved by doping the pillars which boosts radiative recombination rates inside the material and increases the brightness by more than an order of magnitude. In n-doped pillars, whose absorption edge is shifted to 1.49 eV due to the Burstein-Moss effect, Fermi-level splits larger than 1 eV are found, 0.46 eV below the absorption edge. Long non-radiative carrier lifetimes of 6.9 ns at room temprature further attest to the quality of the pillars. These results confirm that InP is a promising materials choice for photovoltaic devices in which the light absorber exhibits large surface-to-volume ratios.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	0836
Ending Page	0839
File Size	796229
Page Count	4
File Format	PDF
DOI	10.1109/PVSC.2013.6744275
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Lighting Sun Nanowires Photovoltaic cells Silicon Photoluminescence III-V Semiconductor Materials Indium Phosphide
Content Type	Text
Resource Type	Article

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