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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Li, Z. Krishnan, R. Tong, G. Kaczynski, R. Schoop, U. Anderson, T.J. |
| Copyright Year | 2013 |
| Description | Author affiliation: Univ. of Florida, Gainesville, FL, USA (Li, Z.; Krishnan, R.; Tong, G.; Anderson, T.J.) || Global Solar Energy, Inc., Tucson, AZ, USA (Kaczynski, R.; Schoop, U.) |
| Abstract | Rapid thermal annealing studies were conducted on SS/Mo/CIGS/CdS/ITO/Ag devices as a function of anneal time in dry $N_{2}$ in the temperature range 50 to 200°C, as well as in humidified $N_{2}$ (85% RH) at 85°C. Interestingly, dry $N_{2}$ annealing produced an enhancement in cell performance for low thermal budget, predominantly due to increased $J_{SC},$ and to a lesser extent higher $V_{OC}.$ As examples, CIGS cell efficiency increased by 1.8±0.8% after annealing at 50°C for 300s and 2.0±2.3% when annealed at 100°C for 600s. At higher anneal temperature or longer time the cell performance deteriorated with significant decrease in FF and $V_{OC}.$ The results for the 85% RH at 85°C anneals were similar to the dry anneal studies but with less dramatic changes. Cell performance results after dark annealing indicate light-soaking effects induced by the lamp are not important at these relatively short anneal times. Measurement of quantum efficiency for the annealed samples supports the assumption that the buffer layer/absorber interface degrades at a relatively low temperature and that ITO degradation takes place at higher thermal budgets. |
| Sponsorship | IEEE Electron Devices Soc. |
| Starting Page | 1136 |
| Ending Page | 1141 |
| File Size | 832592 |
| Page Count | 6 |
| File Format | |
| DOI | 10.1109/PVSC.2013.6744340 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium tin oxide Temperature measurement Temperature Degradation Rapid thermal annealing Films reliability CIGS ITO rapid thermal annealing degradation |
| Content Type | Text |
| Resource Type | Article |
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