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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rahman, M.M. Igarashi, M. Weiguo Hu Syazwan, M.E. Hoshi, Y. Usami, N. Samukawa, S. |
| Copyright Year | 2013 |
| Description | Author affiliation: Inst. for Mater. Res., Tohoku Univ., Sendai, Japan (Hoshi, Y.; Usami, N.) || Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan (Rahman, M.M.; Igarashi, M.; Weiguo Hu; Syazwan, M.E.; Samukawa, S.) |
| Abstract | A Quantum Dot Superlattice (QDSL) offers high prospect for new generation photovoltaics. We fabricated and characterized a 3-dimensional array of Si-NDs as a QDSL with a high-aspect ratio, clear interface, and uniform size by using our advanced top-down technology consisting of bio-template and neutral beam etching processes for high-efficiency solar cells. Conductive atomic force microscopy measurements revealed that the conductivity became higher as the arrangement was changed from single Si-ND to 2D and 3D arrays with the same matrix of SiC, i.e. the coupling of wave functions was changed. Moreover, we measured the contribution of 3D Si-NDs array in producing photocurrent inside a quantum dot solar cell and also observed a higher photo absorption of sunlight by 3D Si-NDs (30%) than by a 2D array of Si-NDs (10%). |
| Sponsorship | IEEE Electron Devices Soc. |
| Starting Page | 2456 |
| Ending Page | 2458 |
| File Size | 561227 |
| Page Count | 3 |
| File Format | |
| DOI | 10.1109/PVSC.2013.6744972 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Arrays Three-dimensional displays Silicon carbide Photovoltaic cells Conductivity Absorption Quantum dots mini band silicon quantum dot super lattice |
| Content Type | Text |
| Resource Type | Article |
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