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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tingting Shi Wanjian Yin Al-Jassim, M. Yanfa Yan |
| Copyright Year | 2013 |
| Description | Author affiliation: Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA (Tingting Shi; Wanjian Yin; Yanfa Yan) || Nat. Renewable Energy Lab., Golden, CO, USA (Al-Jassim, M.) |
| Abstract | The atomic structure and electronic properties of aluminum-related defect complexes in silicon are investigated using first-principles calculations. Various configurations of Al-O complexes containing interstitial and substitutional Al atoms and interstitial O atoms are studied. We find that interstitial Al atoms induce deep gap states. The formation energies of interstitial AlO complexes could be much lower than that of interstitial Al under oxygen-rich conditions. We propose that the formation of Al-O complexes may explain the experimental observation that the coexistence of Al and O results in reduced lifetime in Si wafers. |
| Sponsorship | IEEE Electron Devices Soc. |
| Starting Page | 2669 |
| Ending Page | 2672 |
| File Size | 832093 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/PVSC.2013.6745022 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Chemicals Photovoltaic systems Charge carrier lifetime Consumer electronics Photovoltaic cells first principles calculation interstitial aluminum defect level |
| Content Type | Text |
| Resource Type | Article |
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