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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yagi, S. Noguchi, S. Hijikata, Y. Kuboya, S. Onabe, K. Okada, Y. Yaguchi, H. |
| Copyright Year | 2013 |
| Description | Author affiliation: Dept. of Adv. Mater. Sci., Univ. of Tokyo, Kashiwa, Japan (Kuboya, S.; Onabe, K.) || Grad. Sch. of Sci. & Eng., Saitama Univ., Saitama, Japan (Yagi, S.; Noguchi, S.; Hijikata, Y.; Yaguchi, H.) || Reserch Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan (Okada, Y.) |
| Abstract | The optical properties of GaAs:N δ-doped superlattices (SLs) are investigated by photoreflectance (PR), photo luminescence (PL) and photoluminescence excitation (PLE) spectroscopy. A direct evidence of the optical absorption due to an E+ related band of a GaAs:N δ-doped SLs is indicated as a clear absorption edge at 1.6 eV by PLE. AlGaAs layers fabricated on the both sides of the SL region exclude the effect of GaAs absorption on the PLE spectrum, resulting in the successful detection of the absorption property of the SL. In addition, some preliminary characterization of a solar cell using a GaAs:N δ-doped SL is shown. The photocarrier generation originating from SL miniband absorption is confirmed by quantum efficiency measurements. |
| Sponsorship | IEEE Electron Devices Soc. |
| Starting Page | 2490 |
| Ending Page | 2493 |
| File Size | 624928 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/PVSC.2013.6744981 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-06-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Absorption Photovoltaic cells Optical device fabrication Optical superlattices Optical buffering nanostructures III-V semiconductor materials superlattices spectroscopy solar energy |
| Content Type | Text |
| Resource Type | Article |
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