NDLI: Electron viscosity effects on electron drift velocity in silicon MOS inversion layers

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Electron viscosity effects on electron drift velocity in silicon MOS inversion layers

Content Provider	IEEE Xplore Digital Library
Author	Ohno, Y.
Copyright Year	1989
Description	Author affiliation: NEC Corp., Kawasaki, Japan (Ohno, Y.)
Abstract	Electron drift mobility in MOS inversion layers was analyzed by the classical kinetic theory of gases. Drift velocity profiles for electrons perpendicular to the MOS interface were calculated by solving the transport equation for electrons with shear stresses due to the viscosity. The reason for the reduction in drift velocity by gate voltage is attributed to the change in electron mean-free-path near MOS interfaces caused by electron accumulation. Estimated scattering radii for electrons at various substrate temperatures are consistent with those predicted in plasma physics.<>
Starting Page	319
Ending Page	322
File Size	425878
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74288
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Viscosity Electron mobility Silicon Plasma temperature Kinetic theory Gases Equations Stress Voltage Scattering
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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