NDLI: Detection of electromigration in VLSI metalizations layers by low-frequency noise measurements

Content Provider	IEEE Xplore Digital Library
Author	Yang, W. Clik-Butler, Z. Hoang, H.H. Hunter, W.R.
Copyright Year	1989
Description	Author affiliation: Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA (Yang, W.; Clik-Butler, Z.)
Abstract	A fast, nondestructive, wafer-level method of detecting and characterizing electromigration in VLSI interconnections is presented. Low-frequency (LF) noise measurements have been used to predict lifetimes of aluminum metallization layers. The correlation between mechanisms causing these LF fluctuations and electromigration was investigated. It was found that the activation energies measured using LF noise techniques correspond closely to those for electromigration mechanisms. Through the Arrhenius plot of noise power spectral density, activation energies ranging from 0.60 eV to 0.69 eV were deduced. In addition, the frequency exponent gamma of the 1/f/sup gamma / noise spectrum was studied in relation to electromigration damage in the film. A detailed discussion of these findings is presented form the standpoint of the statistical properties of electromigration.<>
Starting Page	681
Ending Page	684
File Size	232380
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74371
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromigration Very large scale integration Low-frequency noise Noise measurement Semiconductor device noise Aluminum Fluctuations Frequency Temperature Semiconductor films
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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