NDLI: High performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors

Content Provider	IEEE Xplore Digital Library
Author	Soole, J.B.D. Schumacher, H. LeBlanc, H.P. Bhat, R. Koza, M.A.
Copyright Year	1989
Description	Author affiliation: Bellcore, Red Bank, NJ, USA (Soole, J.B.D.; Schumacher, H.; LeBlanc, H.P.; Bhat, R.; Koza, M.A.)
Abstract	Performance data are presented for OMCVD (organometallic chemical vapor deposition) grown In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As planar Schottky barrier metal-semiconductor-metal (M-S-M) photodetectors. The high-quality In/sub 0.52/Al/sub 0.48/As and In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As heterointerface resulted in devices with record low leakage current densities of approximately 1 mA/cm/sup 2/ electrode metal, a fast pulse response without a long tail portion, and a low 1/f/sup a/-like noise component at low frequencies. The fully depleted detector had a responsitivity of 0.4 A/W at 1.31 mu m, corresponding to unity internal quantum efficiency, and a pulse response of 49 ps FWHM (full width at half maximum) was recorded for an incident 27-ps pulse of 1.3- mu m light, in close agreement with predictions of a transit time analysis. This model was then used to analyze the dependence of the pulse response on the device dimensions and to examine the tradeoff between bandwidth and efficiency in the generic InGaAs M-S-M detector. Finally, the detector noise was examined. A low level of 1/f/sup a/-like noise was found at low frequencies, with shot noise behavior at higher frequencies, increasing above this close to breakdown. Illumination was found to depress the 1/f/sup a/ low-frequency noise component. Under normal biasing conditions, shot noise behavior would persist down to kilohertz frequencies.<>
Starting Page	713
Ending Page	716
File Size	490156
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74378
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low-frequency noise Frequency Space vector pulse width modulation Detectors Noise level Chemical vapor deposition Schottky barriers Photodetectors Leakage current Electrodes
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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Novel Ga/sub 0.47/In/sub 0.53/As metal-semiconductor-metal photodetectors grown by metalorganic vapor phase epitaxy

Low-frequency noise in lattice-matched In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMTs

Characteristics of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT's with n-and p-channel doping

An In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub 0.53/Ga/sub 0.47/As MISFET with a modulation-doped channel

In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As MSM photodetectors and HEMT's grown by MOCVD on GaAs substrates

High-speed Ga/sub 0.47/In/sub 0.53/As MISIM photodetectors with dielectric-assisted Schottky barriers

Back-illuminated Large-area High-speed In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MSM Photodetector

Monolithically integrated In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As MSM-HEMT receiver grown by OMCVD on patterned InP substrates

Anomalous effects of lamp annealing in modulation-doped In0.53Ga0.47As/In0.52Al0.48As and Si-implanted In0.53Ga0.47As

High performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors

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