NDLI: Secondary electron emission

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Long wavelength InAs/sub 0.2/Sb/sub 0.8/ detectors grown on patterned Si substrates by molecular beam epitaxy

Picosecond photoconductivity using a graded bandgap Al/sub x/Ga/sub 1-x/As active detecting layer

A low-noise and wide-bandwidth InGaAs/InAlAs superlattice APD

High reliability planar InGaAs avalanche photodiodes

Monolithically integrated In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As MSM-HEMT receiver grown by OMCVD on patterned InP substrates

Novel modulator structure permitting synchronous band filling of multiple quantum wells and extremely large phase shifts

Design and test of an 8 GHz, 500 kW, side-coupled gyrotron

Low velocity spread axis encircling electron beam forming system

The operation of a megawatt gyrotron in the submillimeter wave region

Design considerations in achieving 1 MW CW operation with a whispering-gallery-mode gyrotron

Cyclotron autoresonance maser amplifiers and oscillators

A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS

A self-aligned LDD/channel implanted ITLDD process with selectively-deposited poly gates for CMOS VLSI

A high performance and highly reliable dual gate CMOS with gate/n/sup -/ overlapped LDD applicable to the cryogenic operation

1/4- mu m LATID (LArge-Tilt-angle Implanted Drain) technology for 3.3-V operation

An integrated 0.5 mu m CMOS disposable TiN LDD/salicide spacer technology

Optimization of amorphous layer thickness and junction depth on the pre-amorphization method for forming shallow-junction in silicon

Bipolar device design for high density high performance application

Scaling rules for bipolar transistors in BiCMOS circuits

On the scaling property of trench isolation capacitance for advanced high-performance ECL circuits

Hot-electron-induced minority carrier generation in bipolar junction transistors

A closed-form analysis of f/sub T/ for the bipolar transistor down to liquid nitrogen temperature

Pseudo-HBT with polysilicon emitter contact and an ultrashallow highly doped bases by photoepitaxy

Thin-film SOI technology: the solution to many submicron CMOS problems

Half-micron CMOS on ultra-thin silicon on insulator

Improved characteristics of MOSFETs on ultra thin SIMOX

Ultra-high speed CMOS circuits in thin SIMOX films

A fully depleted lean-channel transistor (DELTA)-a novel vertical ultra thin SOI MOSFET

Three dimensional ICs, having four stacked active device layers

Wavelength tunable semiconductor lasers for optical fiber communications

1.5 mu m MQW-DFB laser diode with low chirp and low threshold current

Proposal of self-scanning light emitting device (SLED)

MOCVD growth of optoelectronic integrated circuits

Low threshold current density grating-surface-emitting lasers by OMVPE

Use of hybrid reflectors to achieve low thresholds in all MBE grown vertical cavity surface emitting laser diodes

Monolithic hybrid mode locked 1.3 μm semiconductor laser arrays

Lateral mode controlled wide stripe SBA lasers by modal reflector

A 50 kW peak power, 4 kW average power, moderate confined flow, PPM focused, X-band TWT

Integrated microphone with CMOS circuits on a single chip

Micromechanical logic

Formation of atomically sharp silicon needles (for vacuum microelectronics)

Demonstration of an n-channel inversion mode GaAs MISFET

A 45 GHz strained-layer SiGe heterojunction bipolar transister fabricated with low temperature epitaxy

Deep submicron Cu planar interconnection technology using Cu selective chemical vapor deposition

Monolithic integration of HEMTs and HBTs on an InP substrate and its application to OEICs

Monolithic sampling head IC with resonant tunneling diode for strobe pulse generator on InP substrate

A 27 GHz 20 ps PNP technology

Fabrication and characterization of a quarter micron gate CMOS using ultra-thin Si film (30 nm) on SIMOX substrate

Stacked CMOS inverter with symmetric device performance

A 256 kbit SOI-full-CMOS-SRAM

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Spread source/drain (SSD) MOSFET using selective silicon growth for 64 Mbit DRAMs

Microsensors vs. integrated circuits: a study in contrasts

VLSI applications in implantable medical electronics

Vacuum microelectronics

A surrounding gate transistor (SGT) cell for 64/256 Mbit DRAMs

Scalability of a trench capacitor cell for 64 Mbit DRAM

A spread stacked capacitor (SSC) cell for 64 Mbit DRAMs

In-situ doped polysilicon using vapor dopant for high density DRAMs

Ta/sub 2/O/sub 5/ plasma CVD technology for DRAM stacked capacitors

Future trends and applications of ultra-clean technology

In situ-doped epitaxial silicon film growth at 250 degrees C by an ultra-clean low-energy bias sputtering

New phase shifting mask with self-aligned phase shifters for a quarter micron photolithography

A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)

Understanding of the temperature dependence of channel hot-carrier degradation in the range 77 K to 300 K

Performance and hot-carrier reliability of deep-submicrometer CMOS

A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs

Transient hot-electron effect on n-channel device degradation (MOSFETs)

Determination of spatial distribution of interface states on submicron, lightly doped drain transistors by charge pumping measurement

A re-examination of the physics of multiplication-induced breakdown in MOSFETs

The properties and annealing of gate oxide damage of oxynitride-passivated CMOS transistors arising from mechanical stresses during packaging

Towards VLSI GaAs heterostructure FET integrated circuits

Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs

Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs

A pseudomorphic MODFET structure with excellent linear power performance at mm-wave range

High speed and low power consumption DMT integrated circuits based on direct-coupled FET logic circuits

High performance complementary logic based on GaAs/InGaAs/AlGaAs HIGFETs

Velocity saturation effect in heterostructure field effect transistors

Striped channel field effect transistors with a modulation doped structure

Realistic device simulation in three dimensions (EPROM cell)

A new hot carrier simulation method based on full 3D hydrodynamic equations

A generalized hydrodynamic model capable of incorporating Monte Carlo results (LDD MOS devices)

Two-dimensional simulator for semiconductor lasers

High-resolution self-consistent thermal modelling of multi-gate power GaAs MESFETs

Two dimensional transient device simulator with deep trap model for compound semiconductor devices

Future trends for TFT integrated circuits on glass substrates

A 2/3 inch fully integrated active-matrix LCD with thin mesh polysilicon electrodes

Device layer transferred poly-Si TFT array for high resolution liquid crystal projector

A lag-free 1024*1024 progressive scan interline CCD image sensor with antiblooming and exposure control

New low noise output amplifier for high definition CCD image sensor

High-purity silicon sensor array for imaging soft X-ray and infrared radiation

A GaAs monolithic array of impedance matched antenna/detector pixels for a 94 GHz imaging system

60 percent efficient K-band TWT using a new diamond rod technology

Efficiency improvements in a 12 GHz-50 W space TWT

2.5-dimensional large-signal traveling-wave tube

Simulation of rod charging in TWT helix structures

Coupled cavities by rods (TWTs)

Advanced software coldtest of electron devices with uSOS (TWTs)

Determination of TWT periodic delay line dispersion by means of coupled waveguide analysis

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A 40 GHz f/sub T/ Si bipolar transistor LSI technology

29 ps ECL circuits using U-groove isolated SICOS technology

Self-aligned bipolar npn transistor with 60 nm epitaxial base

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Bipolar transistor design for low process-temperature 0.5 mu m Bi-CMOS

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Electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications

EEPROM device as a reconfigurable analog element for neural networks

Band-to-band tunneling induced substrate hot-electron (BBISHE) injection: a new programming mechanism for nonvolatile memory devices

Hot carrier related phenomena for n- and p-MOSFETs with nitrided gate oxide by RTP

Nitridation induced surface donor layer in silicon and its impact on the characteristics of n- and p-channel MOSFETs

Scanning tunneling microscopy on cleaved silicon pn junctions

Analysis of latchup-induced photoemission

A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence

Design and fabrication of a monolithic high-density probe card for high-frequency on-wafer testing

MOS trench gate field-controlled thyristor

Design aspects of MOS controlled thyristor elements

Ultra-high di/dt 2500 V MOS assisted gate-triggered thyristors (MAGTs) for high repetition excimer laser system

A new recombination model describing heavy-doping effects and low-temperature behaviour

A new band-to-band tunneling model for accurate device simulations of Si MOSFETs

An analytical self-backgating GaAs MESFET model including deep-level trap effects

Electron viscosity effects on electron drift velocity in silicon MOS inversion layers

Effects of self-heating on integrated circuit metallization lifetimes

Physical noise modelling of majority-carrier devices: an adjoint-network approach

Circuit reliability simulator-oxide breakdown module

Amorphous silicon thin film transistor with a buried double-gate structure

Enhancement of performance and reliability of amorphous silicon high voltage thin film transistors by use of field plates

Polysilicon TFTs with low gate line resistance and low off-state current suitable for large area and high resolution LCDs

Physical mechanisms for short channel effects in polysilicon thin films transistors

Drastically improved performance in poly-Si TFTs with channel dimensions comparable to grain size

A new stack capacitor for polysilicon active matrix arrays (TFTs)

Intrinsic capacitance of amorphous silicon and polysilicon thin film transistors

Research on pulsed high power microwave generation in the 1980s

A high power X-band klystron

Secondary electron emission

Numerical and theoretical analysis of the klystrode resonator and collector performance

Extremely small emitter (1*1 mu m/sup 2/) AlGaAs/GaAs HBT's utilizing bridged base electrode structure

A GaAs Bi-FET technology for large scale integration

Process integration of isolated emitter transistors with common emitter heterojunction bipolar transistor circuits

High gain lateral heterojunction bipolar transistors and application to optoelectronic integration

GaAs based opto-thyristor for pulsed power applications

Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE

Non-alloyed Al ohmic contact to GaAs for GaAs/Si interconnect compatibility

Adding analog, EPROM and EEPROM modules to CMOS logic technology: how modular?

A high-performance sub-half micron CMOS technology for fast SRAMs

An advanced self-aligned BiCMOS technology for high performance 1-megabit ECL I/O SRAMs

A 0.5- mu m BiCMOS technology for logic and 4 Mbit-class SRAMs

Future BiCMOS technology for scaled supply voltage

A new BiCMOS/CMOS gate comparison/design methodology and supply voltage scaling model

Scaling of BiCMOS digital circuit structures

The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs

Fluorine effect on boron diffusion of p/sup +/ gate devices (MOSFETs)

Highly reliable ultra-thin SiO/sub 2/ films formed by rapid thermal processing

Rapid thermal annealing for H passivation of polysilicon MOSFETs from Si/sub 3/N/sub 4/ overcoat

The impact of ultrathin nitrided oxide gate-dielectrics on MOS device performance improvement

Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide

A new approach to Monte Carlo simulation

Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors

Self-consistent particle simulation of heterojunction bipolar transistors under high temperature operating conditions

Are GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs

Monte Carlo simulation of electron heating in scaled deep submicron MOSFETs

A monolithic RMS-DC converter using planar diaphragm structures

Integration of surface-micromachined zinc oxide sensors in n-well CMOS technology

An ultrasensitive silicon pressure-based flowmeter

Vacuum-sealed silicon micromachined incandescent light source

Local processing of sensor array data using current mode circuitry

How to achieve nanotesla resolution with integrated silicon magnetotransistors

Amorphous silicon edge detector for application to electronic eyes

The significance of fluctuation phenomena in vacuum microelectronics

Experimental results on gridded arrays of field emission tips

A progress report on the Livermore Miniature Vacuum Tube Project

Lateral miniaturized vacuum devices

Theoretical structural optimization of a GaAs pn or pin structured avalanche electron emitting diode

Photon transport transistor

Polytype heterostructures for electron tunneling devices

A quantum-switched heterojunction bistable bipolar transistor

Room temperature operation of (Al,Ga,In)As/NiAl/(Al,Ga,In)As buried metal well hidden-field effect transistors

Extremely high current density, low peak voltage, pseudomorphic In/sub 0.53/Ga/sub 0.47/As/AlAs/InAs resonant tunneling diodes

Improved vertically integrated resonant tunneling diodes

Large-signal resonant tunneling diode model for SPICE3 simulation

A new self-aligned field oxide cell for multimegabit EPROMs

A 3.6 mu m/sup 2/ memory cell structure for 16 Mb EPROMs

0.6 mu m EPROM cell design based on a new scaling scenario

A high performance CMOS process for submicron 16 Mb EPROM

A versatile stacked storage capacitor on FLOTOX cell for megabit NVRAM applications

New design technology for EEPROM memory cells with 10 million write/erase cycling endurance

A new flash-erase EEPROM cell with a sidewall select-gate on its source side

A new E(E)PROM technology with a TiSi/sub 2/ control gate

High dielectric LDD spacer technology for high performance MOSFET using gate-fringing field effects

Asymmetrical halo source GOLD drain (HS-GOLD) deep sub-half micron n-MOSFET design for reliability and performance

Drain leakage current characteristics due to the band-to-band tunneling in LDD MOS devices

Ultimate CMOS density limits: measured source drain resistance in ultra small devices

Impacts of modified characteristics on 0.1 mu m MOSFET speed based on energy transport and parasitic effects

The effects of off-axis substrate orientation on MOSFET characteristics

The effect of base-emitter spacers and strain dependent densities of states in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

Si/SiGe heterojunction bipolar transistors with current gains up to 5000

High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

SiGe resonant tunneling hot carrier transistor

Advanced heterojunction Ge/sub x/Si/sub 1-x//Si bipolar devices

Si hetero-bipolar transistor with an SiC emitter thin epitaxial base

Planarized SiO/sub 2/ formation by a new microwave plasma system

Low-temperature APCVD oxide using TEOS-ozone chemistry for multilevel interconnections

Characterization of laser planarized aluminum for submicron double level metal CMOS circuits

Single crystal aluminum lines with excellent endurance against stress induced failure

Detection of electromigration in VLSI metalizations layers by low-frequency noise measurements

Monte-Carlo modeling of ion implantation for silicon devices

Shallow junctions-modeling the dominance of point defect charge states during transient diffusion

A two-dimensional thermal oxidation simulator using visco-elastic stress analysis

Determination of doping profile in sub-Debye-length region

Non-destructive and fast electrical profiling method for the active base regions of vertical BJT structures

A 3-D fluid simulation of a dry-etching aluminium hexode reactor

High performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors

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Secondary electron emission

Content Provider	IEEE Xplore Digital Library
Author	Shroff, A.M. Tonnerre, J.C.
Copyright Year	1989
Description	Author affiliation: Thomson Tubes Electroniques, Boulogne-Billancourt, France (Shroff, A.M.; Tonnerre, J.C.)
Abstract	The secondary electron emission of pure metals, cathodes and insulators was measured. The secondary electron emission yield was measured at room temperature and at temperatures up to 1100 degrees C. The cathodes were life-tested at 850 degrees C and were measured at regular intervals at room temperature during a period of 10000 h. The best pure material for cathodes was found to be platinum, while oxide cathodes were the best candidates among complex cathodes. The secondary emission of thin insulating films of alumina and magnesium oxide was also investigated. The results found are in good agreement with those published.<>
Starting Page	375
Ending Page	378
File Size	135130
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74301
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron emission Temperature measurement Cathodes Testing Vehicles Electron beams Electron tubes Current measurement Insulation Diodes
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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