NDLI: A re-examination of the physics of multiplication-induced breakdown in MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Skotnicki, T. Merckel, G. Merrachi, A.
Copyright Year	1989
Description	Author affiliation: CNET-CNS, Meylan, France (Skotnicki, T.; Merckel, G.; Merrachi, A.)
Abstract	It is shown that the physics of multiplication-induced breakdown (MIB) is essentially different from what has previously been thought. Two phases, multiplication-enhanced channel injection (MECI) and multiplication-induced bulk injection (MIBI) of the increased source injection, are distinguished. They are both shown to be impossible to treat conventionally. It is found that MECI can be accounted for in terms of a certain multiplication equivalent threshold lowering (METL). The latter, however, cannot be replaced by the body effect resulting from the external positive bulk bias equal to the internal self-biasing V/sub sub/=R/sub sub/I/sub sub/, as might seem desirable at first sight. In addition, although MIBI can be treated in terms of a parasitic bipolar transistor action, the mode of biasing of the latter, contrary to what other approaches postulate, has little to do with V/sub sub/. This is because of the substrate current I/sub sub/ which implies that the Fermi level follows the increasing (from the bulk terminal to the surface) potential. As a result, the source injection is considerably weaker than in conventional diode and can be associated with an effective junction bias which is much smaller than V/sub sub/.<>
Starting Page	87
Ending Page	90
File Size	503115
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74234
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Physics Electric breakdown MOSFETs Bipolar transistors Diodes Charge carrier processes
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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