NDLI: Optimization of amorphous layer thickness and junction depth on the pre-amorphization method for forming shallow-junction in silicon

Content Provider	IEEE Xplore Digital Library
Author	Tanaka, A. Yamaji, T. Uchiyama, A. Haytashi, T. Iwabuchi, T. Nishikawa, S.
Copyright Year	1989
Description	Author affiliation: Oki Electr. Ind. Co. Ltd., Tokyo, Japan (Tanaka, A.; Yamaji, T.; Uchiyama, A.; Haytashi, T.; Iwabuchi, T.; Nishikawa, S.)
Abstract	A 0.1- mu m-deep p/sup +/-n junction was formed by Si/sup +/ and Ge/sup +/ preamorphization methods. Both the thickness of the preamorphized layer and the junction depth were optimized systematically. It is found that channeling of 15-keV, 210/sup 15/-cm/sup -2/ dose BF/sub 2//sup +/ implantation is eliminated by a 40-nm-thick preamorphized layer formed by Si/sup +/ implantation and that the junction must be formed 70-90 nm deeper than the amorphous-crystal (a-c) interface for the Si/sup +/ case and 20 nm for the Ge/sup +/ case in order to reduce leakage current density J/sub 1/ to less than 110/sup -8/ A/cm/sup -2/. The advantage of the Ge/sup +/ case over the Si/sup +/ case is confirmed. The dependence of J/sub 1/ on the distance between the junction and a-c interface (x/sub j/-x/sub a/) was also investigated. It is confirmed that the preamorphized layer thickness influences the dependence of J/sub 1/ on x/sub j/-x/sub a/ for both Si/sup +/ and Ge/sup +/ preamorphizations.<>
Starting Page	785
Ending Page	788
File Size	232373
Page Count	4
File Format	PDF
ISBN	0780308174
ISSN	01631918
DOI	10.1109/IEDM.1989.74171
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optimization methods Amorphous materials Leakage current Thickness measurement Voltage Automatic logic units Solids Epitaxial growth Furnaces Rapid thermal annealing
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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